Thermal conductivity of Cr-doped GaAs at low temperature
- 1 November 1975
- journal article
- research article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 46 (11) , 4623-4626
- https://doi.org/10.1063/1.321537
Abstract
Below 50 °K, phonon scattering by stacking faults and by very small precipitates (diameter typically 20 Å) is shown to be an important mechanism of the thermal conductivity of Cr : GaAs. The stacking faults are directly observed by x‐ray topography. They appear as the dominant large structural defect. Their association with precipitates is ascribed to the large chromium concentration and to a precipitation which takes place during the growth procedure. The residual optical absorption at 10.6 μ can be attributed to these defects.This publication has 20 references indexed in Scilit:
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