Micron-sized, high aspect ratio bulk silicon micromechanical devices
- 1 January 1992
- conference paper
- Published by Institute of Electrical and Electronics Engineers (IEEE)
Abstract
The fabrication of high-aspect-ratio microstructures having widths of approximately=1 mu m and thicknesses exceeding 10 mu m for application in a variety of microsensors and microactuators is reported. The fabrication process utilizes deep etching of fine features into boron-diffused bulk silicon wafers using chlorine- and fluorine-based reactive ion etching techniques. These wafers are then electrostatically bonded to glass wafers which have been previously patterned with metal interconnect. The wafers are finally etched in an ethylenediamine pyrocatechol solution that frees the microstructures. The process requires a total of three masking steps (two for silicon and one for glass), is single-sided, and has high yield. Structures with thickness-to-width ratios greater than 10:1 have been fabricated using this process. Electrical measurements have shown that very large deflections (>7 mu m) are possible at voltages as low as 25 V.Keywords
This publication has 9 references indexed in Scilit:
- Sub-micron gaps without sub-micron etchingPublished by Institute of Electrical and Electronics Engineers (IEEE) ,2002
- Deep dry etching techniques as a new IC compatible tool for silicon micromachiningPublished by Institute of Electrical and Electronics Engineers (IEEE) ,2002
- A bulk silicon dissolved wafer process for microelectromechanical systemsPublished by Institute of Electrical and Electronics Engineers (IEEE) ,2002
- Surface micromachined platforms using electroplated sacrificial layersPublished by Institute of Electrical and Electronics Engineers (IEEE) ,2002
- An RIE process for submicron, silicon electromechanical structuresPublished by Institute of Electrical and Electronics Engineers (IEEE) ,2002
- Single crystal silicon micro-actuatorsPublished by Institute of Electrical and Electronics Engineers (IEEE) ,2002
- Feature‐Size Dependence of Etch Rate in Reactive Ion EtchingJournal of the Electrochemical Society, 1991
- Deep X-ray and UV lithographies for micromechanicsPublished by Institute of Electrical and Electronics Engineers (IEEE) ,1990
- Laterally Driven Polysilicon Resonant MicrostructuresSensors and Actuators, 1989