Charged excitons and excitons bound to neutral impurities in wurtzite semiconductor structures
- 31 October 2002
- journal article
- research article
- Published by American Physical Society (APS) in Physical Review B
- Vol. 66 (16) , 165223
- https://doi.org/10.1103/physrevb.66.165223
Abstract
We have established the possible symmetries for the states of charged excitons (trions) in bulk materials with the wurtzite structure and in wurtzite-based heterostructures. We considered both free trions and bound ones (or excitons bound to neutral, i.e., un-ionized impurities). From the Pauli principle for identical fermions it is shown that only one symmetry is possible for the ground state of positively charged free trions involving two holes from the same valence band. The property also holds for negatively charged free trions, except in quantum wells and some superlattices for trions whose hole lies in the A valence band. We established the selection rules for trion optical transitions. Only a few trions are dark. Even more, for many trions, several channels are available, in terms of symmetry, for radiative decay, which suggests fast recombination processes. A comparison is provided between exciton and trion transitions. The changes of the symmetry of the states and of the optical selection rules induced by an electric field parallel to the c axis have been considered. When one (several) phonon(s) is (are) involved in a process, it is always possible to connect any initial state to any final one by an optical transition.Keywords
This publication has 8 references indexed in Scilit:
- Exact symmetries of electron states and optical selection rules in wurtzite-based nanostructuresPhysical Review B, 2001
- Phonon-assisted optical transitions in GaN with impurities and defectsPhysica B: Condensed Matter, 2001
- Rapid radiative decay of charged excitonsPhysical Review B, 2000
- Optical Selection Rules for Hexagonal GaNPhysica Status Solidi (b), 1999
- Selection Rules for Optical Transitions Involving Impurities and Defects in Hexagonal GaNPhysica Status Solidi (b), 1998
- High-pressure low-temperature phase transition in a dopedpara-terphenyl crystal: A spectral-hole-burning studyPhysical Review B, 1998
- Energy Level Structure of Biexcitons and Related Optical TransitionsPhysica Status Solidi (b), 1974
- Excitons dans les cristaux de type WurtziteJournal de Physique et le Radium, 1961