Effective masses for impurity states in anisotropic crystals
- 20 February 1984
- journal article
- Published by IOP Publishing in Journal of Physics C: Solid State Physics
- Vol. 17 (5) , 827-831
- https://doi.org/10.1088/0022-3719/17/5/012
Abstract
No abstract availableKeywords
This publication has 13 references indexed in Scilit:
- A novel perturbative-variational approach and its application to the impurity states in anisotropic crystals-A commentJournal of Physics C: Solid State Physics, 1983
- A novel perturbative-variational approach and its application to the impurity states in anisotropic crystalsJournal of Physics C: Solid State Physics, 1982
- Valley-orbit interaction and effective-mass theory for indirect gap semiconductorsJournal of Physics C: Solid State Physics, 1977
- Donor binding energies in multivalley semiconductorsJournal of Physics C: Solid State Physics, 1977
- Theory of localized states in semiconductors. II. The pseudo impurity theory application to shallow and deep donors in siliconPhysical Review B, 1974
- Theory of localized states in semiconductors. I. New results using an old methodPhysical Review B, 1974
- Multivalley Effective-Mass Approximation for Donor States in Silicon. I. Shallow-Level Group-V ImpuritiesPhysical Review B, 1971
- Higher Donor Excited States for Prolate-Spheroid Conduction Bands: A Reevaluation of Silicon and GermaniumPhysical Review B, 1969
- Effect of Stress on the Donor Wave Functions in GermaniumPhysical Review B, 1962
- Shallow Impurity States in Silicon and GermaniumPublished by Elsevier ,1957