Phonon scattering suppression in short periodic AlAs/GaAs multiple-quantum-well structures

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Abstract
The suppression of longitudinally polarized optical‐phonon (LOP) electron scattering in multiple quantum wells (MQWs) was sought in short periodic AlAs/GaAs with well widths of 12, 15, and 20 monolayers and AlAs barrier widths of 2 and 4 monolayers, based on a study of electron mobility in the plane of the MQW. Two‐dimensional electron‐gas structures with MQWs of up to eight wells in their channel were grown. Their mobilities at room temperature were slightly reduced, as compared to samples without MQW channel, due to interaction with interface polaritons from AlAs barriers, while mobility at temperatures <50 K improved due to reduction of remote ionized impurity scattering. The theoretical analysis of the results based on the model of hybridon‐electron interaction in an infinite superlattice is presented. The reduction of room‐temperature mobility in the MQWs is believed to be caused by the interaction of electrons with both barrier interface‐polariton (IP) ‐like modes and the well LOP‐IP hybrids. An alternative explanation of the results of a similar experiment done elsewhere is offered denying the evidence of strong suppression of LOP scattering there.