Interface-Roughness Scattering in GaAs/AlxGa1-xAs Superlattices

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Abstract
The electron mobility limited by the interface-roughness scattering in a GaAs/Al x Ga1-x As superlattice is studied as a function of the period (the well width L W and the barrier thickness L B) and the temperature. If the superlattice period is short and the electronic states resemble that of the 3D state, the mobility is limited by the interface-roughness scattering at low temperatures and insensitive to the temperature, in good agreement with experimental results. Using a finite potential-barrier height, it is shown that the variation of the mobility as a function of the quantum well width L W is not so steep as that of the single-quantum-well structure assuming an infinite potential-barrier height.