Resonant interband coupling in single-barrier heterostructures of InAs/GaSb/InAs and GaSb/InAs/GaSb
- 15 September 1990
- journal article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 68 (6) , 2854-2857
- https://doi.org/10.1063/1.346417
Abstract
A new mechanism for negative differential resistance due to electron/light hole coupling has been observed using broken gap heterostructures of InAs/GaSb/InAs and GaSb/InAs/GaSb. The best peak-to-valley ratio is about 2:1 (3.7:1 at 77 K) for a GaSb layer width of 10 nm. The peak current density of 4.2 kA cm−2 and the peak voltage of 300 mV are consistent with the interpretation of these experiments as interband coupling between the InAs conduction band and the GaSb valence (light hole) band.This publication has 20 references indexed in Scilit:
- Negative differential resistance in InAs/GaSb single-barrier heterostructuresElectronics Letters, 1989
- Oscillations up to 420 GHz in GaAs/AlAs resonant tunneling diodesApplied Physics Letters, 1989
- Band offsets at heterointerfaces: Theoretical basis, and review of recent experimental workSurface Science, 1986
- GaSbAlSbInAs multi-heterojunctionsPhysica B+C, 1983
- Growth of III–V semiconductors by molecular beam epitaxy and their propertiesThin Solid Films, 1983
- Two-dimensional quantum states in multi-heterostructures of three constituentsSurface Science, 1982
- Electronic properties of InAsGaSb superlatticesSurface Science, 1980
- In1−xGaxAs-GaSb1−yAsy heterojunctions by molecular beam epitaxyApplied Physics Letters, 1977
- A new semiconductor superlatticeApplied Physics Letters, 1977
- Tunneling in a finite superlatticeApplied Physics Letters, 1973