Recombination Properties of Gold in Silicon

The presence of gold atoms in the silicon lattice decreases the lifetime of excess electrons and holes in $p$- and $n$-type material. The capture of electrons in $p$-type silicon occurs through the gold donor level with a capture cross section, ${\sigma }_{n0\mathrm{}}$, of 3.5×${10}^{-15\mathrm{}}$ ${\mathrm{cm}}^2$ (at 300°K). This capture cross section varies as $T^{-2.5\mathrm{}}$ between 200° and 500°K. In $n$-type silicon the electron capture cross section, ${\sigma }_{n0\mathrm{}}$, is 5×${10}^{-16\mathrm{}}$ ${\mathrm{cm}}^2$ at 300°K and is temperature independent; the hole capture cross section, ${\sigma }_{p0\mathrm{}}$, is 1×${10}^{-15\mathrm{}}$ ${\mathrm{cm}}^2$ at 300°K and varies as $T^{-4\mathrm{}}$. The capture in this case occurs through the gold acceptor level.