Measurement of Short Carrier Lifetimes

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Abstract
Semiconductor carrier lifetimes as short as 10−8 sec may be obtained from the decay of bombardment conductivity following pulsed excitation by high energy (700 kev) electrons from a Van de Graaff accelerator. Bombardment damage of the sample is minimized by the use of short pulses (2×10−8 or 3×10−4 sec) and a low repetition rate (15 or 30 pulses per sec). Modification of a standard accelerator for these measurements is discussed in some detail and some typical results are presented.

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