High voltage (450 V) 6H-SiC lateral MESFET structure
- 26 September 1996
- journal article
- Published by Institution of Engineering and Technology (IET) in Electronics Letters
- Vol. 32 (20) , 1929-1931
- https://doi.org/10.1049/el:19961287
Abstract
A high voltage 6H-SiC lateral MESFET has been fabricated using a three mask process. Selective ion implantation was used to create the conducting layer (N-region) demonstrating the RESURF effect in SiC for first time, as well as easy isolation and edge termination. This MESFET was able to withstand a forward blocking voltage of 450 V at a gate voltage of –20 V. The specific on-resistance and transconductance for a device with a drain gate separation of 15 µm was found to be 83 mΩ cm2 and 2 mS/mm, respectively.Keywords
This publication has 3 references indexed in Scilit:
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