Silicon-carbide high-voltage (400 V) Schottky barrier diodes
- 1 October 1992
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Electron Device Letters
- Vol. 13 (10) , 501-503
- https://doi.org/10.1109/55.192814
Abstract
The authors describe the fabrication and characteristics of the first high-voltage (400-V) silicon-carbide (6H-SiC) Schottky barrier diodes. Measurements of the forward I-V characteristics of these diodes demonstrate a low forward voltage drop of approximately 1.1 V at an on-state current density of 100 A/cm/sup 2/ for a temperature range of 25 to 200 degrees C. The reverse I-V characteristics of these devices exhibit a sharp breakdown, with breakdown voltages exceeding 400 V at 25 degrees C. In addition, these diodes are shown to have superior reverse recovery characteristics when compared with high-speed silicon P-i-N rectifiers.Keywords
This publication has 3 references indexed in Scilit:
- Analysis of silicon carbide power device performancePublished by Institute of Electrical and Electronics Engineers (IEEE) ,2002
- High-voltage 6H-SiC p-n junction diodesApplied Physics Letters, 1991
- Pt and PtSix Schottky contacts on n-type β-SiCJournal of Applied Physics, 1989