Pt and PtSix Schottky contacts on n-type β-SiC
- 1 May 1989
- journal article
- research article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 65 (9) , 3526-3530
- https://doi.org/10.1063/1.342626
Abstract
Schottky barrier rectifying contacts using e‐beam‐deposited platinum have been demonstrated on n‐type β‐SiC. The electrical properties of these contacts were examined as a function of annealing temperature using I‐V and C‐V measurements. Auger analysis was used to study the metallurgical reactions at the Pt/SiC interface. Short annealing cycles in the 350–800 °C temperature range led to formation of a mixed structure of PtSix and PtC at the interface, evidenced by migration of platinum into the SiC above 350 °C. The barrier height was found to increase from 0.95 to 1.35 eV with increasing annealing temperature. The rectifying characteristics improved following an initial 350 °C anneal and remained relatively stable up to 800 °C.This publication has 14 references indexed in Scilit:
- Electrical Contacts to Beta Silicon Carbide Thin FilmsJournal of the Electrochemical Society, 1988
- The effect of heat treatment on Au Schottky contacts on β-SiCIEEE Transactions on Electron Devices, 1987
- Infrared reflectance evaluation of chemically vapor deposited β-SiC films grown on Si substratesJournal of Applied Physics, 1986
- Schottky barrier diodes on 3C-SiCApplied Physics Letters, 1985
- Production of large-area single-crystal wafers of cubic SiC for semiconductor devicesApplied Physics Letters, 1983
- High-field transport in wide-band-gap semiconductorsPhysical Review B, 1975
- AuSiC Schottky barrier diodesSolid-State Electronics, 1974
- Reverse current-voltage characteristics of metal-silicide Schottky diodesSolid-State Electronics, 1970
- Surface-Barrier Diodes on Silicon CarbideJournal of Applied Physics, 1968
- Growth and Properties of β-SiC Single CrystalsJournal of Applied Physics, 1966