Increased radiation hardness of GaAs laser diodes at high current densities
- 1 August 1974
- journal article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 45 (8) , 3485-3489
- https://doi.org/10.1063/1.1663806
Abstract
Total light output of GaAs laser diodes has been measured at 300 and 76°K before and after successive neutron irradiations to a cumulative fluence of 6.5×1014 neutron/cm2 (> 10 keV). The range of current densities used extended from well below the laser threshold current density to the maximum allowable value. Both the subthreshold light output and the threshold current density were sensitive to neutron damage in agreement with previous observations. However, at current densities significantly above threshold the light output is much less sensitive to irradiation and, in fact, the light output at 76°K was observed to increase following irradiation. These latter results have significant practical importance for cases in which laser diodes must operate in a radiation environment.This publication has 9 references indexed in Scilit:
- Gamma Irradiation and Annealing Effects in Nitrogen-Doped GaAs1-xPx Green and Yellow Light-Emitting DiodesIEEE Transactions on Nuclear Science, 1972
- Large-Optical-Cavity (AlGa) As–GaAs Heterojunction Laser Diode: Threshold and EfficiencyJournal of Applied Physics, 1972
- Neutron Damage in GaAs Laser Diodes: At and above Laser ThresholdIEEE Transactions on Nuclear Science, 1972
- GaAs–AlxGa1−xAs Double Heterostructure Injection LasersJournal of Applied Physics, 1971
- Neutron Damage in Epitaxial GaAs Laser DiodesJournal of Applied Physics, 1971
- Control of Optical Losses in p-n Junction Lasers by Use of a Heterojunction: Theory and ExperimentJournal of Applied Physics, 1970
- Infrared Absorption in Neutron-Irradiated GaAsJournal of Applied Physics, 1969
- The injection laserPhysica Status Solidi (b), 1968
- Dispersion of the Index of Refraction Near the Absorption Edge of SemiconductorsPhysical Review B, 1964