Gamma Irradiation and Annealing Effects in Nitrogen-Doped GaAs1-xPx Green and Yellow Light-Emitting Diodes
- 1 December 1972
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Nuclear Science
- Vol. 19 (6) , 386-390
- https://doi.org/10.1109/tns.1972.4326863
Abstract
Irradiation of GaP (green) and GaAs.1P.9(yellow) light-emitting diodes from a 60Co source results in a decrease in quantum efficiency, peak spectral intensity, brightness and carrier lifetime of the respective devices. Damage constants expressed in terms of absorbed dose are Kιo = 4×10-8 rad(Si)-1 for the green diodes and Kιo = 3×10-8 rads(Si)-1 for the yellow diodes. Following isochronal annealing to 500°C the efficiency, lifetime, and peak spectral intensity recover to 75 percent of their respective initial values. Recovery is noted to start at 250°C.Keywords
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