Electrical transport properties of single-crystal antimony nanowire arrays

Single crystalline Sb nanowire arrays with diameters ranging from 9 to $40\mathrm{nm}$ embedded in anodic alumina membranes were prepared by pulsed electrodeposition. Electrical transport measurements confirm the existence of the transition from a positive temperature coefficient of resistance to a negative one with decreasing diameter of the Sb nanowires. The weak localization effect is considered to play an important role in determining the temperature-dependent behavior of the resistance. The weak temperature dependence of the single crystalline Sb nanowire arrays might find application in constant resistance nanodevices.