Fabrication and anomalous transport properties of an Sb/Bi segment nanowire nanojunction array
- 9 August 2005
- journal article
- Published by IOP Publishing in Nanotechnology
- Vol. 16 (10) , 2096-2099
- https://doi.org/10.1088/0957-4484/16/10/020
Abstract
An Sb (40 nm diameter)-Bi (30 nm diameter) segment nanowire nanojunction array was fabricated by pulsed electrodeposition. Electric transport properties of the junction array were studied down to 4.2 K and in magnetic fields up to 5 T. Temperature versus resistance measurements exhibited a resistive switching behaviour at zero magnetic field, but this feature disappeared with increasing magnetic field. These features might find application in sub-100 nm metal-semiconductor field effect transistors.Keywords
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