Theoretical modeling of thermoelectricity in Bi nanowires
- 21 June 1999
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 74 (26) , 4005-4007
- https://doi.org/10.1063/1.123242
Abstract
A theoretical model based on the basic electronic band structure of bulk Bi is developed to predict the dependence of the band structure and thermoelectric properties on nanowire width. By carefully tailoring the Bi wire size and carrier concentration, substantial enhancement in the thermoelectric figure of merit is expected for small nanowire widths.Keywords
This publication has 9 references indexed in Scilit:
- Bismuth quantum-wire arrays fabricated by a vacuum melting and pressure injection processJournal of Materials Research, 1998
- Theoretical Modeling of Thermoelectricity in Bi NanowiresMRS Proceedings, 1998
- Use of quantum-well superlattices to obtain a high figure of merit from nonconventional thermoelectric materialsApplied Physics Letters, 1993
- Thermoelectric figure of merit of a one-dimensional conductorPhysical Review B, 1993
- Properties of porous anodic aluminum oxide films as membranes.JOURNAL OF CHEMICAL ENGINEERING OF JAPAN, 1984
- Temperature dependence of the band parameters of bismuthPhysical Review B, 1974
- Alfvén-Wave Propagation in Solid-Stae Plasmas. III. Quantum Oscillations of the Fermi Surface of BismuthPhysical Review B, 1969
- The crystal structure of arsenic at 4.2, 78 and 299°KJournal of Applied Crystallography, 1969
- Transport Properties of Bismuth Single CrystalsJournal of Applied Physics, 1963