Atomic-layer adsorption of P on Si(100) and Ge(100) by PH3 using an ultraclean low-pressure chemical vapor deposition
- 31 July 2000
- journal article
- Published by Elsevier in Applied Surface Science
- Vol. 162-163, 390-394
- https://doi.org/10.1016/s0169-4332(00)00221-x
Abstract
No abstract availableKeywords
This publication has 9 references indexed in Scilit:
- Atomic control of doping during SiGe epitaxyThin Solid Films, 1998
- Low-Temperature Epitaxial Growth of Si/Si1-xGex/Si Heterostructure by Chemical Vapor DepositionJapanese Journal of Applied Physics, 1994
- Selective germanium epitaxial growth on silicon using CVD technology with ultra-pure gasesJournal of Crystal Growth, 1990
- Atomic layer doped field-effect transistor fabricated using Si molecular beam epitaxyApplied Physics Letters, 1989
- Growth and characterization of atomic layer doping structures in SiJournal of Applied Physics, 1989
- Low-temperature silicon selective deposition and epitaxy on silicon using the thermal decomposition of silane under ultraclean environmentApplied Physics Letters, 1989
- Hydrogen desorption kinetics from monohydride and dihydride species on silicon surfacesPhysical Review B, 1988
- Hydrogen adsorption on Ge(100) studied by high-resolution energy-loss spectroscopyPhysical Review B, 1986
- Doping reaction of PH3 and B2H6 with Si(100)Journal of Applied Physics, 1986