Atomic layer doped field-effect transistor fabricated using Si molecular beam epitaxy
- 8 May 1989
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 54 (19) , 1869-1871
- https://doi.org/10.1063/1.101263
Abstract
Atomic layer doped field-effect transistors (ALD FETs) have been fabricated, in which n-type, δ-doped, and p-type doped regions are used as a conductive channel and a punchthrough stopper, respectively. It is shown that the ALD FET shows a high transconductance while the punchthrough current is sufficiently suppressed, indicating that the device is promising as a short-channel FET for the next generation of ultralarge scale integration.Keywords
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