Nonequilibrium phonon effects on the time-dependent relaxation of hot carriers in GaAs MQW
- 30 April 1988
- journal article
- Published by Elsevier in Solid-State Electronics
- Vol. 31 (3) , 451-454
- https://doi.org/10.1016/0038-1101(88)90316-4
Abstract
No abstract availableKeywords
This publication has 5 references indexed in Scilit:
- Nonequilibrium electron-phonon scattering in semiconductor heterojunctionsPhysical Review B, 1986
- Hot-Electron Relaxation in GaAs Quantum WellsPhysical Review Letters, 1985
- Energy-Loss Rates for Hot Electrons and Holes in GaAs Quantum WellsPhysical Review Letters, 1985
- Time-Resolved Photoluminescence of Two-Dimensional Hot Carriers in GaAs-AlGaAs HeterostructuresPhysical Review Letters, 1984
- Optical Vibrational Modes and Electron-Phonon Interaction in GaAs Quantum WellsPhysical Review Letters, 1984