Hot-Electron Relaxation in GaAs Quantum Wells
- 18 November 1985
- journal article
- Published by American Physical Society (APS) in Physical Review Letters
- Vol. 55 (21) , 2359-2361
- https://doi.org/10.1103/physrevlett.55.2359
Abstract
No abstract availableKeywords
This publication has 15 references indexed in Scilit:
- Charge injection transistor based on real-space hot-electron transferIEEE Transactions on Electron Devices, 1984
- Hot electrons in modulation-doped GaAs-AlGaAs heterostructuresApplied Physics Letters, 1984
- Electric field induced heating of high mobility electrons in modulation-doped GaAs-AlGaAs heterostructuresApplied Physics Letters, 1983
- Measurement of the high-field drift velocity of electrons in inversion layers on siliconIEEE Electron Device Letters, 1981
- Multilevel double error correcting codesElectronics Letters, 1981
- Measurements of hot-electron conduction and real-space transfer in GaAs-AlxGa1−xAs heterojunction layersApplied Physics Letters, 1981
- Negative differential resistance through real-space electron transferApplied Physics Letters, 1979
- Thermalization of the Electron—Hole Plasma in GaAs.Physica Status Solidi (b), 1978
- Hot electrons and phonons under high intensity photoexcitation of semiconductorsSolid-State Electronics, 1978
- Radiative Recombination from Photoexcited Hot Carriers in GaAsPhysical Review Letters, 1969