Measurements of hot-electron conduction and real-space transfer in GaAs-AlxGa1−xAs heterojunction layers
- 1 January 1981
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 38 (1) , 36-38
- https://doi.org/10.1063/1.92117
Abstract
Measurements of the current‐voltage characteristics of GaAs‐AlxGa1−xAs heterojunction layers are reported. The experimental results are consistent with the idea of real‐space transfer of the electrons out of the GaAs into the AlxGa1−xAs under hot‐electron conditions. Current saturation and negative differential resistance are observed as predicted by Monte Carlo simulations.Keywords
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