Monte Carlo simulation of real-space electron transfer in GaAs-AlGaAs heterostructures

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Abstract
The Monte Carlo method has been used to simulate electron transport in GaAs/AlGaAs heterostructures with an electric field applied parallel to the heterojunction interface. The simulations indicate that a unique physical mechanism for negative differential conductivity is provided by such layered heterostructures, which is analogous in many respects to the Gunn effect. This mechanism has been termed ’’real‐space electron transfer’’ since it involves the transfer of electrons from a high‐mobility GaAs region to an adjacent low‐mobility AlGaAs region as the applied electric field intensity is increased. The simulations further indicate that the important details of the resulting velocity‐field characteristics for these layered heterostructures can be controlled primarily through material doping densities, layer thicknesses, and the material properties of the individual layers. Thus, the phenomenon of real‐space electron transfer potentially provides the ability to ’’engineer’’ those basic material properties which influence the performance of negative resistance devices.