Hot electrons and phonons under high intensity photoexcitation of semiconductors
- 1 January 1978
- journal article
- Published by Elsevier in Solid-State Electronics
- Vol. 21 (1) , 43-50
- https://doi.org/10.1016/0038-1101(78)90113-2
Abstract
No abstract availableKeywords
This publication has 21 references indexed in Scilit:
- Low density photoexcitation phenomena in semiconductors: Aspects of theory and experimentSolid-State Electronics, 1978
- Single particle scattering from hot electrons in GaAsSolid State Communications, 1975
- Distribution function of photoexcited carriers in highly excited GaAsPhysical Review B, 1974
- Energy Relaxation of Photoexcited Hot Electrons in GaAsPhysical Review B, 1973
- Photoexcited hot LO phonons in GaAsSolid State Communications, 1970
- Radiative Recombination from Photoexcited Hot Carriers in GaAsPhysical Review Letters, 1969
- Recombination Emission in InSbPhysical Review B, 1966
- Free-Carrier Infrared Absorption in III-V Semiconductors III. GaAs, InP, GaP and GaSbJournal of the Physics Society Japan, 1964
- Band Structure and Electron Transport of GaAsPhysical Review B, 1960
- The influence of interelectronic collisions on conduction and breakdown in polar crystalsProceedings of the Royal Society of London. Series A. Mathematical and Physical Sciences, 1958