Electric field induced heating of high mobility electrons in modulation-doped GaAs-AlGaAs heterostructures
- 1 January 1983
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 42 (1) , 55-57
- https://doi.org/10.1063/1.93771
Abstract
We report the simultaneous determination of the temperature and mobility of electrons in modulation-doped multiple quantum well GaAs-AlGaAs heterostructures as a function of applied electric field up to 150 V/cm. The decrease of high field mobility with increasing electron temperature is found to be much more rapid than the decrease of the low field mobility with the lattice temperature.Keywords
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