Hot electrons and phonons in quantum-well AlxGa1-xAs-GaAs heterostructures
- 30 June 1980
- journal article
- Published by Elsevier in Solid State Communications
- Vol. 34 (9) , 749-752
- https://doi.org/10.1016/0038-1098(80)90906-0
Abstract
No abstract availableKeywords
This publication has 8 references indexed in Scilit:
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- Quantum-well heterostructure lasersIEEE Journal of Quantum Electronics, 1980
- LO phonon effective temperature in highly excited GaAsSolid State Communications, 1979
- Impurity and phonon scattering in layered structuresApplied Physics Letters, 1979
- Phonon-assisted recombination and stimulated emission in multiple quantum-well Mo-CVD AlxGa1-xAs-GaAs heterostructures
A ̊ , Eh ̵ ωh ̵ ωSolid State Communications, 1979 - Phonon-sideband MO-CVD quantum-well AlxGa1−xAs-GaAs heterostructure laserApplied Physics Letters, 1979
- Bandfilling in metalorganic chemical vapor deposited AlxGa1−xAs-GaAs-AlxGa1−xAs quantum-well heterostructure lasersJournal of Applied Physics, 1978
- Hot electrons and phonons under high intensity photoexcitation of semiconductorsSolid-State Electronics, 1978