Surface structure and the origin of interfacial dislocations in epitaxial films
- 30 April 1985
- journal article
- Published by Elsevier in Surface Science
- Vol. 152-153, 1197-1202
- https://doi.org/10.1016/0039-6028(85)90539-4
Abstract
No abstract availableThis publication has 4 references indexed in Scilit:
- Surface structure and the origin of antisite domains in GaAs:Ge epitaxial filmsSurface Science, 1985
- The atomic structure of the NiSi2-(001)Si interfacePhilosophical Magazine A, 1984
- BicrystallographyProceedings of the Royal Society of London. Series A. Mathematical and Physical Sciences, 1983
- Atomic structure of the NiSi2/(111)Si interfacePhilosophical Magazine A, 1982