Surface structure and the origin of antisite domains in GaAs:Ge epitaxial films
- 30 April 1985
- journal article
- Published by Elsevier in Surface Science
- Vol. 152-153, 1191-1196
- https://doi.org/10.1016/0039-6028(85)90538-2
Abstract
No abstract availableKeywords
This publication has 5 references indexed in Scilit:
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- Interfacial defects in non-holosymmetric and non-symmorphic crystalsPhilosophical Magazine A, 1983
- BicrystallographyProceedings of the Royal Society of London. Series A. Mathematical and Physical Sciences, 1983
- Polar-on-nonpolar epitaxy: Sublattice ordering in the nucleation and growth of GaP on Si(211) surfacesJournal of Vacuum Science and Technology, 1982
- On the (110) orientation as the preferred orientation for the molecular beam epitaxial growth of GaAs on Ge, GaP on Si, and similar zincblende-on-diamond systemsApplied Physics Letters, 1980