Muonium dynamics in semiconductors

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Abstract
Investigations of the dynamics of muonium transitions in semiconductors using RF-μSR and longitudinal depolarization measurements are described. Results for intrinsic and doped Si allow development of an essentially complete model for the Mu dynamics. Energy barriers are compared with the few available measurements for H in Si. In intrinsic and p-type samples three states, Mu 0 BC , Mu 0 T , and Mu + BC are active and at high temperatures a rapid cycle among all three states is identified. In n-type samples the Mu - T state becomes important and numerous additional transitions become active. Parameters are extracted for seven separate transition processes and features associated with several additional ones are identified. Preliminary data for other materials are also briefly discussed.