Monolithic transformers for silicon RF IC design
- 27 November 2002
- conference paper
- Published by Institute of Electrical and Electronics Engineers (IEEE)
Abstract
The construction and electrical characteristics of two-port transformers (1:1 and 1:n turns ratio) and multi-port transformer baluns fabricated in a production silicon technology are presented. A high-linearity 5 GHz mixer design illustrates the advantages of the trifilar transformer in an RF IC application.Keywords
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