Thick Junctions Made with Nuclear Compensated Silicon
- 1 June 1964
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Nuclear Science
- Vol. 11 (3) , 276-279
- https://doi.org/10.1109/tns.1964.4323434
Abstract
It is known that making detectors with great depletion depth is related to the availability of high resistivity Si, generally obtained by compensation. We have experimented a new compensating technique, based on the production of P-31, in situ, by nuclear transmutation of Si by thermal neutrons. After annealing, very high resistivity Si (200 000 Ω. cm at 300° K) has been obtained by this method. NIP structures with great depletion depth obtained by nuclear compensation are described, as an example of the possibilities of this new technique.Keywords
This publication has 1 reference indexed in Scilit:
- Temperature dependence of hall mobility and μH/μD for SiJournal of Physics and Chemistry of Solids, 1963