Temperature dependence of hall mobility and μH/μD for Si
- 1 December 1963
- journal article
- Published by Elsevier in Journal of Physics and Chemistry of Solids
- Vol. 24 (12) , 1539-1542
- https://doi.org/10.1016/0022-3697(63)90096-9
Abstract
No abstract availableThis publication has 9 references indexed in Scilit:
- Galvanomagnetic Effects in-Type SiliconPhysical Review B, 1960
- Low-Temperature Impurity Conduction in-Type SiliconPhysical Review B, 1960
- Weak-Field Magnetoresistance in-Type SiliconPhysical Review B, 1958
- Galvanomagnetic Effects in-Type SiliconPhysical Review B, 1957
- Hall and Drift Mobility in High-Resistivity Single-Crystal SiliconPhysical Review B, 1957
- Drift and Conductivity Mobility in SiliconPhysical Review B, 1956
- Statistics and Galvanomagnetic Effects in Germanium and Silicon with Warped Energy SurfacesPhysical Review B, 1955
- Electrical Properties of Silicon Containing Arsenic and BoronPhysical Review B, 1954
- Drift Mobilities in Semiconductors. II. SiliconPhysical Review B, 1954