The dynamics of shallow donor ionization in n-GaAs studied with subnanosecond FIR-induced photoconductivity
- 1 January 1994
- journal article
- Published by IOP Publishing in Semiconductor Science and Technology
- Vol. 9 (1) , 30-34
- https://doi.org/10.1088/0268-1242/9/1/006
Abstract
The low-temperature dynamics of far-infrared (FIR) excited electrons bound to shallow donors has been studied in n-GaAs. In a magnetic field of 3.6 T the electrons are excited from the ground state to the 2p+1 donor state with a short pulse of 118.8 mu m radiation and the photoconductive response is monitored with subnanosecond resolution. The observed response can be described with a simple three-level rate equation model, yielding a minimum value of 5*109 s-1 for the ionization rate of a shallow donor in the 2p+1 bound state.Keywords
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