A new threshold-voltage model for small-geometry buried-channel MOSFETs
- 1 December 1985
- journal article
- Published by Elsevier in Solid-State Electronics
- Vol. 28 (12) , 1283-1289
- https://doi.org/10.1016/0038-1101(85)90055-3
Abstract
No abstract availableKeywords
This publication has 5 references indexed in Scilit:
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- A new method to determine MOSFET channel lengthIEEE Electron Device Letters, 1980
- Modeling of an ion-implanted silicon-gate depletion-mode IGFETIEEE Transactions on Electron Devices, 1975
- A high-performance N-channel MOSLSI using depletion-type load elementsIEEE Journal of Solid-State Circuits, 1972