Complementary JFET negative-resistance devices
- 1 December 1975
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Journal of Solid-State Circuits
- Vol. 10 (6) , 509-515
- https://doi.org/10.1109/JSSC.1975.1050651
Abstract
A new type of negative-resistance device utilizing a simple combination of complementary JFET's, which is suitable not only for discrete use but for use as a unit cell in bipolar integrated circuits (IC's) is proposed. The basic structure and the essential fabrication technology are described, and varieties of unitary negative-resistance devices using the integrated complementary JFET structure are proposed. The principle of operation is discussed with numerical and experimental analysis. Empirical formulas for practical design have been established with satisfactory agreements with experimental results.Keywords
This publication has 5 references indexed in Scilit:
- Synthesis of electronic bistable and monostable circuitsPublished by Institute of Electrical and Electronics Engineers (IEEE) ,2005
- A new ?-type negative resistance device of integrated complementary FET structureIEEE Transactions on Electron Devices, 1974
- Negative resistance of a modified insulated-gate field-effect transistorProceedings of the IEEE, 1974
- A surface-controlled negative impedance transistorPublished by Institute of Electrical and Electronics Engineers (IEEE) ,1973
- A distributed gate bistable MOS transistorSolid-State Electronics, 1971