Lateral spread of ion-implanted impurities in silicon
- 1 June 1974
- journal article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 45 (6) , 2801-2803
- https://doi.org/10.1063/1.1663678
Abstract
A technique for measuring the overlaps of the gate electrodes of field-effect structures is described. Ion-implanted self-aligned gate FET structures were used to evaluate the lateral spread of low-energy (RP<0.1 μm) high-dosage (5×1015/cm2) phosphorus and boron implantations and was found to be less than 10−5 cm. Sheet resistance of the implanted region can also be evaluated by this technique. Some series resistance effects associated with inadequate annealing as well as two-dimensional field aspects on the threshold voltage associated with short channel devices in this experiment were observed.This publication has 4 references indexed in Scilit:
- Lateral spread of boron ions implanted in siliconApplied Physics Letters, 1972
- Theoretical Considerations on Lateral Spread of Implanted IonsJapanese Journal of Applied Physics, 1972
- Transport Properties of Electrons in Inverted Silicon SurfacesPhysical Review B, 1968
- Mobility Anisotropy and Piezoresistance in Silicon p-Type Inversion LayersJournal of Applied Physics, 1968