Determination of the MOS flatband condition by electroreflectance and capacitance measurements
- 16 February 1974
- journal article
- research article
- Published by Wiley in Physica Status Solidi (a)
- Vol. 21 (2) , 469-478
- https://doi.org/10.1002/pssa.2210210211
Abstract
No abstract availableKeywords
This publication has 5 references indexed in Scilit:
- Ge-Aqueous-Electrolyte Interface: Electrical Properties and Electroreflectance at the Fundamental Direct ThresholdPhysical Review B, 1970
- Optical Field Effect in SiliconPhysical Review B, 1965
- Elektronische HalbleiterPublished by Springer Nature ,1965
- Optical Constants of Silicon in the Region 1 to 10 evPhysical Review B, 1960
- Impurity Redistribution and Junction Formation in Silicon by Thermal OxidationBell System Technical Journal, 1960