Determination of the oxygen precipitate-free zone width in silicon wafers from surface photovoltage measurements
- 31 January 1983
- journal article
- Published by Elsevier in Solid-State Electronics
- Vol. 26 (1) , 33-36
- https://doi.org/10.1016/0038-1101(83)90158-2
Abstract
No abstract availableKeywords
This publication has 9 references indexed in Scilit:
- Temperature dependence of the optical properties of siliconJournal of Applied Physics, 1979
- A review of some charge transport properties of siliconSolid-State Electronics, 1977
- Defects in silicon substratesJournal of Vacuum Science and Technology, 1977
- Nucleation of CuSi precipitate colonies in oxygen-rich siliconApplied Physics Letters, 1976
- Electron and hole drift velocity measurements in silicon and their empirical relation to electric field and temperatureIEEE Transactions on Electron Devices, 1975
- Interpretation of steady-state surface photovoltage measurements in epitaxial semiconductor layersSolid-State Electronics, 1972
- Large-signal analysis of a silicon Read diode oscillatorIEEE Transactions on Electron Devices, 1969
- Optical Constants of Silicon in the Region 1 to 10 evPhysical Review B, 1960
- Intrinsic Optical Absorption in Single-Crystal Germanium and Silicon at 77°K and 300°KPhysical Review B, 1955