Deep Levels Induced by High Fluence Proton Irradiation in Undoped GaAs Diodes
- 1 January 1997
- journal article
- Published by Springer Nature in MRS Proceedings
Abstract
No abstract availableKeywords
This publication has 17 references indexed in Scilit:
- Comparison between deep level defects in GaAs induced by gamma, 1 MeV electron, and neutron irradiationJournal of Applied Physics, 1995
- Characterization of deep levels and carrier compensation created by proton irradiation in undoped GaAsJournal of Applied Physics, 1995
- Performance of a new ohmic contact for GaAs particle detectorsNuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment, 1995
- Introduction of metastable vacancy defects in electron-irradiated semi-insulating GaAsPhysical Review B, 1995
- The effect of alpha-particle and proton irradiation on the electrical and defect properties of n-GaAsNuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 1994
- The Characterisation of Selective Proton Damage on GaAs Solar CellsPhysica Status Solidi (a), 1993
- Generation of the EL2 defect in n-GaAs irradiated by high energy protonsSemiconductor Science and Technology, 1992
- Role of Irradiation Temperature in the Conductivity Compensation of n-GaAs by Radiation DefectsPhysica Status Solidi (a), 1989
- EL2-related studies in irradiated and implanted GaAsRevue de Physique Appliquée, 1988
- Irradiation-induced defects in GaAsJournal of Physics C: Solid State Physics, 1985