The Characterisation of Selective Proton Damage on GaAs Solar Cells
- 16 January 1993
- journal article
- research article
- Published by Wiley in Physica Status Solidi (a)
- Vol. 135 (1) , 119-132
- https://doi.org/10.1002/pssa.2211350108
Abstract
No abstract availableKeywords
This publication has 8 references indexed in Scilit:
- Radiation damage and annealing in GaAs solar cellsIEEE Transactions on Electron Devices, 1990
- Thermal emission from damage near the interface of Schottky barriers and its influence on thermally stimulated and transient current experimentsJournal of Physics D: Applied Physics, 1977
- The effects of radiation damage on the properties of Ni-nGaAs Schottky diodes—I: Characterisation of defect levelsSolid-State Electronics, 1976
- A theoretical and experimental study of recombination in silicon p−n junctionsSolid-State Electronics, 1975
- Compensation of N-Type GaAs by Proton BombardmentPublished by Springer Nature ,1971
- Carrier transport across metal-semiconductor barriersSolid-State Electronics, 1970
- Determination of deep centers in silicon by thermally stimulated conductivity measurementsSolid-State Electronics, 1969
- GaAs Schottky diodes with linear log I/V behaviour over eight decades of currentElectronics Letters, 1968