A theoretical and experimental study of recombination in silicon p−n junctions
- 30 June 1975
- journal article
- Published by Elsevier in Solid-State Electronics
- Vol. 18 (6) , 569-577
- https://doi.org/10.1016/0038-1101(75)90035-0
Abstract
No abstract availableKeywords
This publication has 11 references indexed in Scilit:
- The role of radiation damage on the current-voltage characteristics of p-n junctionsSolid-State Electronics, 1974
- The electrical activity of neutron damage centres in silicon diodesRadiation Effects, 1974
- Iterative scheme for computer simulation of semiconductor devicesSolid-State Electronics, 1972
- Lifetime effects in ion implanted siliconRadiation Effects, 1970
- On the theory of logorithmic silicon diodesRadio and Electronic Engineer, 1969
- Modified theory of the current/voltage relation in silicon p – n junctionsElectronics Letters, 1968
- An accurate numerical steady-state one-dimensional solution of the P-N junctionSolid-State Electronics, 1968
- A self-consistent iterative scheme for one-dimensional steady state transistor calculationsIEEE Transactions on Electron Devices, 1964
- Statistics of the Recombinations of Holes and ElectronsPhysical Review B, 1952
- The Theory ofp-nJunctions in Semiconductors andp-nJunction TransistorsBell System Technical Journal, 1949