Determination of deep centers in silicon by thermally stimulated conductivity measurements
- 1 November 1969
- journal article
- Published by Elsevier in Solid-State Electronics
- Vol. 12 (11) , 857-860
- https://doi.org/10.1016/0038-1101(69)90042-2
Abstract
No abstract availableKeywords
This publication has 5 references indexed in Scilit:
- A Technique for Trap Determinations in Low-Resistivity SemiconductorsJournal of Applied Physics, 1968
- Resistivity, mobility and impurity levels in GaAs, Ge, and Si at 300°KSolid-State Electronics, 1968
- The evaluation of electron trapping parameters from conductivity glow curves in cadmium sulphideBritish Journal of Applied Physics, 1964
- Vergleichende Untersuchungen von Leitfähigkeitsglowkurven an CdS‐EinkristallenPhysica Status Solidi (b), 1963
- Notizen: Tiefe Energieniveaus in SiliciumZeitschrift für Naturforschung A, 1958