A Technique for Trap Determinations in Low-Resistivity Semiconductors
- 1 October 1968
- journal article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 39 (11) , 5149-5151
- https://doi.org/10.1063/1.1655936
Abstract
No abstract availableThis publication has 4 references indexed in Scilit:
- Impact Ionization and Charge Transport in GaAs: GaP 50% AlloyJournal of Applied Physics, 1968
- Determination of Deep Centers in Conducting Gallium ArsenideJournal of Applied Physics, 1966
- The Preparation and Properties of Vapor-Deposited Epitaxial GaAs[sub 1−x]P[sub x] Using Arsine and PhosphineJournal of the Electrochemical Society, 1966
- Properties of High-Resistivity Gallium Arsenide Compensated with Diffused CopperJournal of Applied Physics, 1961