Impact Ionization and Charge Transport in GaAs: GaP 50% Alloy
- 1 January 1968
- journal article
- research article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 39 (1) , 57-61
- https://doi.org/10.1063/1.1655779
Abstract
Diodes of 50% alloy of GaAs: GaP have been studied in which the material has been made semi‐insulating by compensation with iron. An electrode of evaporated gold on this material is blocking for electrons. Electrons may be injected from a base wafer of n‐type GaAs. The material is slightly p‐type due to ionization of deep acceptor levels. When electrons are injected there is a space‐charge‐limited current in which the electron concentration is controlled by a small concentration of holes which are present. Analysis of the data gives estimates of the concentration and capture cross section for recombination centers. Using a blocking contact, impact ionization multiplication of carriers injected by light is observed. The impact ionization coefficient is measured.This publication has 11 references indexed in Scilit:
- The Effective Ionization Rate for Hot Carriers in GaAs†International Journal of Electronics, 1966
- The Preparation and Properties of Vapor-Deposited Epitaxial GaAs[sub 1−x]P[sub x] Using Arsine and PhosphineJournal of the Electrochemical Society, 1966
- ELECTRON MOBILITY IN GaAs1−xPx ALLOYSApplied Physics Letters, 1965
- Electroluminescent Gallium Arsenide Diodes with Negative ResistanceJournal of Applied Physics, 1964
- Double Injection in Deep-Lying Impurity SemiconductorsJournal of Applied Physics, 1964
- Volume-controlled current injection in insulatorsReports on Progress in Physics, 1964
- Lichtempfindliche raumladungsbeschränkte StrömePhysica Status Solidi (b), 1964
- Charge Multiplication in GaP p-n JunctionsJournal of Applied Physics, 1962
- Simplified Theory of Space-Charge-Limited Currents in an Insulator with TrapsPhysical Review B, 1956
- Space-Charge-Limited Currents in SolidsPhysical Review B, 1955