Comment on ’’Evidence for electronic stopping in ion implantation: Shallower profile of lighter isotope 10B in Si’’

15 December 1975

journal article
research article
Published by AIP Publishing in Applied Physics Letters

Vol. 27 (12) , 648-649
https://doi.org/10.1063/1.88347

Abstract

A recent paper bases several conclusions regarding electronic and nuclear stopping powers of silicon for implanted boron on a few capacitance‐voltage measurements of impurity profiles. We suggest here that the accuracy of C‐V data is insufficient to distinguish small changes in projected range, and that measurements with better resolution are required.

Keywords

This publication has 5 references indexed in Scilit:

Limitations of the CV technique for ion-implanted profiles
IEEE Transactions on Electron Devices, 1975
Evidence for electronic stopping in ion implantation: Shallower profile of lighter isotope 10B in Si
Applied Physics Letters, 1975
The influence of debye length on the C-V measurement of doping profiles
IEEE Transactions on Electron Devices, 1971
On the Measurement of Impurity Atom Distributions by the Differential Capacitance Technique [Letter to the Editor]
IBM Journal of Research and Development, 1969
On the Measurement of Impurity Atom Distributions in Silicon by the Differential Capacitance Technique
IBM Journal of Research and Development, 1968