Tungsten plug technology using substitution of W for Si
- 1 March 1990
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Electron Devices
- Vol. 37 (3) , 577-582
- https://doi.org/10.1109/16.47760
Abstract
No abstract availableThis publication has 7 references indexed in Scilit:
- Chemical vapor deposition kinetics of tungsten from WCl6 onto nickel plate at elevated temperaturesMetallurgical Transactions B, 1991
- Tungsten plug technology using substitution of W for SiIEEE Transactions on Electron Devices, 1990
- The Effects of Chemical Oxide on the Deposition of Tungsten by the Silicon Reduction of Tungsten HexafluorideJournal of the Electrochemical Society, 1987
- The Formation and Structure of CVD W Films Produced by the Si Reduction of WF 6Journal of the Electrochemical Society, 1987
- Selective CVD tungsten silicide for VLSI applicationsPublished by Institute of Electrical and Electronics Engineers (IEEE) ,1987
- Film Thickness Dependence of Silicon Reduced LPCVD Tungsten on Native Oxide ThicknessJournal of the Electrochemical Society, 1986
- Selective Low Pressure Chemical Vapor Deposition of TungstenJournal of the Electrochemical Society, 1984