Interpretation of mechanism determining field effect mobility in a-Si:H TFT based on surface reaction model
- 1 May 1996
- journal article
- Published by Elsevier in Journal of Non-Crystalline Solids
- Vol. 198-200, 1121-1124
- https://doi.org/10.1016/0022-3093(96)00060-9
Abstract
No abstract availableThis publication has 2 references indexed in Scilit:
- Defect formation during growth of hydrogenated amorphous siliconPhysical Review B, 1993
- Metal-semiconductor junctions and amorphous-crystalline heterojunctions using B-doped hydrogenated amorphous siliconApplied Physics Letters, 1984