Metal-semiconductor junctions and amorphous-crystalline heterojunctions using B-doped hydrogenated amorphous silicon
- 15 August 1984
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 45 (4) , 433-435
- https://doi.org/10.1063/1.95248
Abstract
Investigated are the current-voltage characteristics of metal (Au, Mg)/B-doped hydrogenated amorphous silicon (a-Si:H)/crystalline silicon (n+, p+) diodes for various doping levels of B in a-Si:H. From junction studies we determine the conduction type of B-doped a-Si:H on the basis of ‘‘dominant’’ carrier concentration, and find that the p-n transition occurs at B2H6/SiH4∼10−6 although the conductivity minimum appears at B2H6/SiH4∼10−4.Keywords
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