Ohmic Contact Properties of Magnesium Evaporated onto Undoped and P-doped a-Si: H
- 1 March 1983
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 22 (3A) , L197
- https://doi.org/10.1143/jjap.22.l197
Abstract
We have investigated the current-voltage characteristics of metal/undoped a-Si: H/n + (or p +) c-Si structures using Mg, Au, Pt and Al. It has been indicated that the energy band of undoped a-Si: H shows a downward bending against Mg, being analogous to n + a-Si: H/undoped a-Si: H contact, while the band shows an upward bending against Au, Pt and Al. Mg/undoped a-Si: H contact is found to allow injection of electrons into the conduction band of a-Si: H, providing us a good ohmic contact property. This contact does not exhibit the thermal-degradation at least up to 100°C.Keywords
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