Amorphous-silicon thin-film metal-oxide-semiconductor transistors
- 1 May 1980
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 36 (9) , 754-755
- https://doi.org/10.1063/1.91639
Abstract
Two types of glow‐discharged amorphous‐silicon thin‐film metal‐oxide‐semiconductor field‐effect transistors (MOSFET’s) were fabricated. The N‐channel enhancement‐type FET, which has an undoped channel region, showed only a few hysteresis characteristics and, by changing the gate voltage, the drain current was changed from the order of pA to the order of 0.1 μA at Vd=20 V. The FET, which has a doped n layer at the channel region, operated in the depletion mode and its on‐current was changed by changing the doping‐gas concentration. It seems that the FET’s have various potential applications, especially for switching circuits used for display devices.Keywords
This publication has 3 references indexed in Scilit:
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- Amorphous silicon p-n junctionApplied Physics Letters, 1976
- A 6 × 6 inch 20 lines-per-inch liquid-crystal display panelIEEE Transactions on Electron Devices, 1973